NTE Electronics NTE312 N-Channel Silicon Junction Field Effect Transistor, TO92 Type Package
$6.30

Description

High Power Gain: 10dB Min at 400MHz..High Trans conductance: 4000 mho Min at 400MHz. Weight :0.2600 Pounds.Drain and Gate Leads Separated for High Maximum Stable Gain.Cross−Modulation Minimized by Square−Law Transfer Characteristic.For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment

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