Siliocn Wafer 4inch N Type 100 Oxide Layers 280nm 0.01~0.02Ω Single Side Polished Semiconductor Substrate【Sokatec】 (25)
$450.00
Description
Method: CZ ; Size: 4inch ;.Type: N-Type ; Dopant: Sb ; Orientation: 100 ;.Resistivity: 0.01~0.02ΩΩ ; Thickness: 450um±25 ; Oxide Layers: 280nm ;.TTV＜10um ; Front side: polished; Backside: etched ;.[Sokatec] High quality silicon wafer. Customized products available.
