Product Details: HEMTs and HBTs
| Editor: | Aditya Gupta |
| Preface by: | Fazal Ali |
| Author: | Gupta Ali |
| Format: | Hardcover: 392 pages. |
| Publisher: | Artech House Inc (02/01/1991) |
| ISBN: | 0890064016 |
| ISBN13: | 9780890064016 |
| Reading Level: |
Publisher Notes: HEMTs and HBTs
Preface xi Chapter 1 HEMTs and HBTs: Introduction and Overview
by Fazal Ali, Aditya Gupta1 1.1 Introduction 1 1.2 High Electron Mobility Transistors (HEMTs) 3 1.3 Heterojunction Bipolar Transistors (HBTs) 5 1.4 Summary 8 Chapter 2 HEMT Device Physics and Models
by Mukunda B. Das11 2.1 Introduction 11 2.2 Carrier Transport in the HEMT Structure 13 2.2.1 Band Diagram and 2-DEG in AlGaAs/GaAs Systems 14 2.2.2 2-DEG Carrier Mobility and Saturation Velocity 18 2.2.3 2-DEG Charge-Control by Schottky Barrier Gate 22 2.2.4 Ohmic Contacts and Series Resistances 26 2.3 The Charge-Control Model 29 2.3.1 dc and Small-Signal Characteristics 29 2.3.2 Temperature Stability of Device Operation 36 2.3.3 Low-Frequency (LF) Equivalent Network Model 39 2.3.4 The Unity-Current-Gain Frequency 44 2.3.5 Low-Frequency 1/f and g-r Noise Sources 47 2.4 High-Frequency (HF) Limitations 51 2.4.1 HF Equivalent Network for the Intrinsic HEMT 52 2.4.2 Determination of Equivalent Network Parameters 57 2.4.3 Power Gain and Stability 61 2.4.4 HF Noise Sources and Performance of HEMTs 63 Chapter 3 HEMT Devices and Circuit Applications
by P.C. Chao, Alan Swanson, April Brown, Umesh Mishra, Fazal Ali, Cindy Yuen77 3.1 Introduction 77 3.2 GaAs-Based Conventional HEMT 77 3.2.1 Material Considerations 79 3.2.2 Device Fabrication 84 3.2.3 dc and RF Performance 91 3.2.4 Outlook 99 3.3 GaAs-Based Pseudomorphic HEMT 103 3.3.1 Material Structure 103 3.3.2 Applications of Pseudomorphic HEMTs 111 3.4 InP-Based Pseudomorphic HEMT 123 3.4.1 Introduction 123 3.4.2 Material Properties and Growth 124 3.4.3 Device Fabrication and Performance 134 3.4.4 Circuit Performance 143 3.5 HEMT Analog Circuit Applications 148 3.5.1 Introduction 148 3.5.2 HEMT Low-Noise Amplifiers 148 3.5.3 HEMT Wideband Amplifiers 150 3.5.4 HEMT Power Amplifiers 159 3.5.5 HEMT Control Circuits 163 3.5.6 HEMT Mixers and Converters 168 3.5.7 HEMT Oscillators 174 3.5.8 HEMT Frequency Doublers 175 3.5.9 Device Testing 177 3.5.10 Conclusion 182 3.6 HEMT Reliability 184 3.6.1 Reliability Testing of Low-Noise HEMTs 184 3.6.2 Reliability of Low-Noise HEMTs 186 3.6.3 Summary 188 Chapter 4 HBT Device Physics and Models
by Mukunda B. Das191 4.1 Introduction 191 4.2 Carrier Transport in HBT Structures 195 4.2.1 Band Diagram and Current Transport 196 4.2.2 Recombination Processes 200 4.2.3 Drift, Diffusion, and Saturation Velocity 202 4.2.4 Ohmic Contacts and Series Resistances 204 4.3 The Charge-Control Model 206 4.3.1 dc and Small-Signal Characteristics 207 4.3.2 LF Equivalent Network Model and Unity Current Gain Frequency 212 4.3.3 The Switching Limitations 215 4.3.4 Low-Frequency 1/f Noise and g-r Noise Sources 219 4.4 High Frequency Limitations 224 4.4.1 HF Two-port Parameters and Equivalent Network Model 224 4.4.2 Determination of the Equivalent Network Parameters 228 4.4.3 Power Gain and Stability 234 4.4.4 HF Noise Sources and Noise Figures 236 4.4.5 Power Density Limitations of HBTs 241 4.4.6 Comparison of HBTs and HEMTs 246 Chapter 5 HBT Devices and Circuit Applications
by Michael E. Kim, Burhan Bayraktaroglu, Aditya Gupta253 5.1 Introduction 253 5.1.1 Comparison with GaAs MESFET and HEMT 257 5.1.2 Comparison with Advanced Silicon Bipolar Transistor 258 5.2 Device Structure 260 5.2.1 Epitaxial Layer Growth 266 5.2.2 Emitter-up versus Collector-up 269 5.3 HBT Fabrication Technology 270 5.3.1 Self-Aligned Contacts 274 5.3.2 Planar Structures 276 5.3.3 Representative HBT IC Process 278 5.4 Technology Characterization 281 5.4.1 HBT dc Characteristics 282 5.4.2 HBT High-Frequency Characteristics 286 5.4.3 Intrinsic HBT Linearity 287 5.4.4 Intrinsic HBT Nonlinearity 287 5.4.5 HBT Noise Performance 290 5.4.6 Schottky Diode Characteristics 291 5.4.7 Thin-Film Resistors 291 5.4.8 Metal-Insulator-Metal (MIM) Capacitors 292 5.4.9 HBT Device Modeling and Simulation 292 5.4.10 Technology Qualification 292 5.5 Power HBT Design Considerations 301 5.5.1 Collector Design 301 5.5.2 Device Impedance 302 5.5.3 Size Considerations 304 5.5.4 Thermal Considerations 307 5.5.5 HBT Scaling 311 5.5.6 HBT Monolithic Amplifiers 316 5.5.7 HBT Complementary Amplifiers 318 5.6 Circuit Applications 322 5.6.1 Analog and Microwave Applications 328 5.6.2 Microwave Oscillators 333 5.6.3 Digital Applications 341 5.6.4 Analog-to-Digital Conversion Applications 345 5.6.5 Monolithically Combined Microwave-Digital Applications 352 5.7 InP-Based HBT 354 5.8 Reliability 361 Index 371
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